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Crucial Technology CT51264BA1339.D16F 4GB
Kingston KTP9W1-MID 16GB

Crucial Technology CT51264BA1339.D16F 4GB vs Kingston KTP9W1-MID 16GB

总分
star star star star star
Crucial Technology CT51264BA1339.D16F 4GB

Crucial Technology CT51264BA1339.D16F 4GB

总分
star star star star star
Kingston KTP9W1-MID 16GB

Kingston KTP9W1-MID 16GB

差异 规格 评论

差异

Crucial Technology CT51264BA1339.D16F 4GB 需要考虑的原因
Crucial Technology CT51264BA1339.D16F 4GB
报告一个错误
Kingston KTP9W1-MID 16GB 需要考虑的原因
Kingston KTP9W1-MID 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 39
    左右 -22% 更低的延时
  • 更快的读取速度，GB/s
    16.5 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.4 left arrow 8.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264BA1339.D16F 4GB
Kingston KTP9W1-MID 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 32
  • 读取速度，GB/s
    13.2 left arrow 16.5
  • 写入速度，GB/s
    8.2 left arrow 14.4
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2165 left arrow 3424

Crucial Technology CT51264BA1339.D16F 4GB RAM的比较

Samsung M378B5773DH0-CH9 2GB
Crucial Technology CT25664BA160B.C8FE 2GB

Kingston KTP9W1-MID 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965669-018.A00G 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology CT16G4SFD8213.C16FBD 16GB
Crucial Technology CT16G4SFD8213.C16FBD 16GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Kingston 9905700-011.A00G 8GB
Kingston 9905700-011.A00G 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Crucial Technology BL16G32C16U4BL.16FE 16GB
Crucial Technology BL16G32C16U4BL.16FE 16GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
Crucial Technology CT8G4DFD824A.C16FBR2 8GB
Crucial Technology CT8G4DFD824A.C16FBR2 8GB
内存RAM
Crucial Technology CT51264BA1339.D16F 4GB
Crucial Technology CT51264BA1339.D16F 4GB
Kingston KTP9W1-MID 16GB
Kingston KTP9W1-MID 16GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
G Skill Intl F4-2400C16-8GFX 8GB
G Skill Intl F4-2400C16-8GFX 8GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Mushkin 99[2/7/4]189F 4GB
Mushkin 99[2/7/4]189F 4GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Kingston 9905743-034.A00G 8GB
Kingston 9905743-034.A00G 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Corsair CM4X8GD3200C16K4 8GB
Corsair CM4X8GD3200C16K4 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Samsung M471A1G43DB0-0-B 8GB
Samsung M471A1G43DB0-0-B 8GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Patriot Memory (PDP Systems) PSD416G26662 16GB
Patriot Memory (PDP Systems) PSD416G26662 16GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
V-Color Technology Inc. TN48G26S819-SB 8GB
V-Color Technology Inc. TN48G26S819-SB 8GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
G Skill Intl F4-2400C15Z8GNT 8GB
G Skill Intl F4-2400C15Z8GNT 8GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Crucial Technology BL8G32C16U4B.M8FE1 8GB
Crucial Technology BL8G32C16U4B.M8FE1 8GB
内存RAM