Corsair CMY8GX3M2A2666C10 4GB vs G Skill Intl F4-2133C15-8GFX 8GB

总分

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分

G Skill Intl F4-2133C15-8GFX 8GB

G Skill Intl F4-2133C15-8GFX 8GB

差异规格评论

差异

Corsair CMY8GX3M2A2666C10 4GB

需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB

报告一个错误

低于PassMark测试中的延时，ns

17 23

左右 26% 更低的延时
更快的读取速度，GB/s

22.8 16

测试中的平均数值
更快的写入速度，GB/s

15.4 11.4

测试中的平均数值

G Skill Intl F4-2133C15-8GFX 8GB

需要考虑的原因
G Skill Intl F4-2133C15-8GFX 8GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMY8GX3M2A2666C10 4GB

G Skill Intl F4-2133C15-8GFX 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

17 23
读取速度，GB/s

22.8 16.0
写入速度，GB/s

15.4 11.4
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3391 2816

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M471A1K43BB1-CTD 8GB

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Samsung M3 78T2953EZ3-CF7 1GB

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Micron Technology 18ASF2G72PDZ-2G3A1 16GB

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V-GEN D4H4GS24A8 4GB

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Samsung M471B5273CH0-CH9 4GB

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Crucial Technology CT16G4SFD8213.C16FH1 16GB

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Elpida EBJ40UG8EFU0-GN-F 4GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Kingston 99U5469-045.A00LF 4GB

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Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB

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Crucial Technology CT16G4SFRA266.C8FB 16GB

Crucial Technology CT16G4SFRA266.C8FB 16GB