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Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F4-3600C19-8GSXWB 8GB

Corsair CMY8GX3M2A2666C10 4GB vs G Skill Intl F4-3600C19-8GSXWB 8GB

总分
star star star star star
Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分
star star star star star
G Skill Intl F4-3600C19-8GSXWB 8GB

G Skill Intl F4-3600C19-8GSXWB 8GB

差异 规格 评论

差异

Corsair CMY8GX3M2A2666C10 4GB 需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    17 left arrow 29
    左右 41% 更低的延时
  • 更快的读取速度，GB/s
    22.8 left arrow 19.4
    测试中的平均数值
G Skill Intl F4-3600C19-8GSXWB 8GB 需要考虑的原因
G Skill Intl F4-3600C19-8GSXWB 8GB
报告一个错误
  • 更快的写入速度，GB/s
    15.8 left arrow 15.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F4-3600C19-8GSXWB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    17 left arrow 29
  • 读取速度，GB/s
    22.8 left arrow 19.4
  • 写入速度，GB/s
    15.4 left arrow 15.8
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    3391 left arrow 3614

Corsair CMY8GX3M2A2666C10 4GB RAM的比较

Micron Technology 4ATF1G64AZ-3G2B1 8GB
Crucial Technology CT8G48C40U5.M4A1 8GB

G Skill Intl F4-3600C19-8GSXWB 8GB RAM的比较

SK Hynix HMA851U6CJR6N-VK 4GB
Micron Technology 16ATF2G64AZ-3G2J1 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F4-3600C19-8GSXWB 8GB
G Skill Intl F4-3600C19-8GSXWB 8GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
G Skill Intl F4-3600C16-8GTZRC 8GB
G Skill Intl F4-3600C16-8GTZRC 8GB
内存RAM
Kingston KHX1866C9D3/8GX 8GB
Kingston KHX1866C9D3/8GX 8GB
Samsung M378A4G43AB2-CVF 32GB
Samsung M378A4G43AB2-CVF 32GB
内存RAM
Mushkin 996902 2GB
Mushkin 996902 2GB
Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB
Chun Well Technology Holding Limited CL19-19-19 D4-2666
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Kingston 9905598-019.A00G 16GB
Kingston 9905598-019.A00G 16GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
Transcend Information JM3200HSE-32G 32GB
Transcend Information JM3200HSE-32G 32GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-3200C16-4GRK 4GB
G Skill Intl F4-3200C16-4GRK 4GB
内存RAM
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Ramaxel Technology RMUA5090KB78HAF2133 8GB
Ramaxel Technology RMUA5090KB78HAF2133 8GB
内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
SK Hynix HMA851S6JJR6N-VK 4GB
SK Hynix HMA851S6JJR6N-VK 4GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CMK128GX4M8A2133C13 16GB
Corsair CMK128GX4M8A2133C13 16GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
G Skill Intl F4-3800C14-16GTZN 16GB
G Skill Intl F4-3800C14-16GTZN 16GB
内存RAM
Samsung M471A1K43EB1-CWE 8GB
Samsung M471A1K43EB1-CWE 8GB
Samsung M471A1K43CB1-CTD 8GB
Samsung M471A1K43CB1-CTD 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Micron Technology 9905625-004.A03LF 8GB
Micron Technology 9905625-004.A03LF 8GB
内存RAM
Corsair CML16GX3M2A1600C10 8GB
Corsair CML16GX3M2A1600C10 8GB
V-Color Technology Inc. TD8G16C16-UHK 8GB
V-Color Technology Inc. TD8G16C16-UHK 8GB
内存RAM