Corsair CMY8GX3M2A2666C10 4GB vs INTENSO M418039 8GB

总分

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分

INTENSO M418039 8GB

INTENSO M418039 8GB

差异规格评论

差异

Corsair CMY8GX3M2A2666C10 4GB

需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB

报告一个错误

低于PassMark测试中的延时，ns

17 20

左右 15% 更低的延时
更快的读取速度，GB/s

22.8 16

测试中的平均数值
更快的写入速度，GB/s

15.4 7.4

测试中的平均数值

INTENSO M418039 8GB

需要考虑的原因
INTENSO M418039 8GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMY8GX3M2A2666C10 4GB

INTENSO M418039 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

17 20
读取速度，GB/s

22.8 16.0
写入速度，GB/s

15.4 7.4
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3391 2414

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Avant Technology J642GU42J5213N2 16GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Team Group Inc. TEAMGROUP-D4-3866 4GB

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Corsair CMN32GX4M2Z4600C18 16GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Micron Technology 16ATF2G64HZ-3G2E1 16GB

Micron Technology 16ATF2G64HZ-3G2E1 16GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

G Skill Intl F4-3200C16-8GSXFB 8GB

G Skill Intl F4-3200C16-8GSXFB 8GB

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Corsair CM3X8GA2400C11Y2R 8GB

Samsung M378A2G43MB1-CTD 16GB

Samsung M378A2G43MB1-CTD 16GB