Corsair CMY8GX3M2A2666C10 4GB vs Kingston ACR32D4U2S1ME-8 8GB

总分

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分

Kingston ACR32D4U2S1ME-8 8GB

Kingston ACR32D4U2S1ME-8 8GB

差异规格评论

差异

Corsair CMY8GX3M2A2666C10 4GB

需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB

报告一个错误

低于PassMark测试中的延时，ns

17 36

左右 53% 更低的延时
更快的读取速度，GB/s

22.8 17.4

测试中的平均数值
更快的写入速度，GB/s

15.4 11.5

测试中的平均数值

Kingston ACR32D4U2S1ME-8 8GB

需要考虑的原因
Kingston ACR32D4U2S1ME-8 8GB

报告一个错误

更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Corsair CMY8GX3M2A2666C10 4GB

Kingston ACR32D4U2S1ME-8 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

17 36
读取速度，GB/s

22.8 17.4
写入速度，GB/s

15.4 11.5
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

3391 2876

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-2400C17-8GIS 8GB

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Corsair CM4X8GF2666C16K4 8GB

Corsair CM4X8GF2666C16K4 8GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Crucial Technology BLS16G4D30AESE.M16FE 16GB

Crucial Technology BLS16G4D30AESE.M16FE 16GB

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Samsung M393A1G40DB1-CRC 8GB

Samsung M393A1G40DB1-CRC 8GB