Samsung M378T5663QZ3-CF7 2GB vs Avant Technology J641GU42J5213ND 8GB

总分

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

总分

Avant Technology J641GU42J5213ND 8GB

Avant Technology J641GU42J5213ND 8GB

差异规格评论

差异

Samsung M378T5663QZ3-CF7 2GB

需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 11.3

测试中的平均数值

Avant Technology J641GU42J5213ND 8GB

需要考虑的原因
Avant Technology J641GU42J5213ND 8GB

报告一个错误

低于PassMark测试中的延时，ns

43 56

左右 -30% 更低的延时
更快的写入速度，GB/s

9.2 1,813.5

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M378T5663QZ3-CF7 2GB

Avant Technology J641GU42J5213ND 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 43
读取速度，GB/s

4,387.7 11.3
写入速度，GB/s

1,813.5 9.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

693 2098

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HMA851S6CJR6N-VK 4GB

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Golden Empire CL18-20-20 D4-3600 8GB

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Apacer Technology 78.01G86.9H50C 1GB

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G Skill Intl F4-4400C19-32GTZR 32GB

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Samsung M378T5663QZ3-CF7 2GB

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Avant Technology J641GU42J5213ND 8GB

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Kingston 99U5584-010.A00LF 4GB

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Mushkin MR[ABC]4U320GJJM16G 16GB

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Asgard VMA44UI-MEC1U2AW2 32GB

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Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

SK Hynix HMA82GU6CJR8N-VK 16GB

SK Hynix HMA82GU6CJR8N-VK 16GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Crucial Technology CT16G4DFD824A.M16FA 16GB

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Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

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G Skill Intl F4-3600C18-16GTRS 16GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Samsung M471A2K43CB1-CTCT 16GB

Samsung M471A2K43CB1-CTCT 16GB