Corsair CMY8GX3M2A2666C10 4GB vs Kingston HP26D4S9S8HJ-8 8GB

总分

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分

Kingston HP26D4S9S8HJ-8 8GB

Kingston HP26D4S9S8HJ-8 8GB

差异规格评论

差异

Corsair CMY8GX3M2A2666C10 4GB

需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB

报告一个错误

低于PassMark测试中的延时，ns

17 37

左右 54% 更低的延时
更快的读取速度，GB/s

22.8 14.7

测试中的平均数值
更快的写入速度，GB/s

15.4 9.4

测试中的平均数值

Kingston HP26D4S9S8HJ-8 8GB

需要考虑的原因
Kingston HP26D4S9S8HJ-8 8GB

报告一个错误

更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CMY8GX3M2A2666C10 4GB

Kingston HP26D4S9S8HJ-8 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

17 37
读取速度，GB/s

22.8 14.7
写入速度，GB/s

15.4 9.4
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

3391 2438

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Samsung M3 93T5750CZA-CE6 2GB

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SK Hynix HMT41GU7MFR8A-H9 8GB

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ATP Electronics Inc. A4G08QA8BNPBSE 8GB

ATP Electronics Inc. A4G08QA8BNPBSE 8GB