Corsair CMY8GX3M2A2666C10 4GB vs Kingston K1CXP8-MIE 16GB

总分

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分

Kingston K1CXP8-MIE 16GB

Kingston K1CXP8-MIE 16GB

差异规格评论

差异

Corsair CMY8GX3M2A2666C10 4GB

需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB

报告一个错误

低于PassMark测试中的延时，ns

17 42

左右 60% 更低的延时
更快的读取速度，GB/s

22.8 15

测试中的平均数值
更快的写入速度，GB/s

15.4 11.8

测试中的平均数值

Kingston K1CXP8-MIE 16GB

需要考虑的原因
Kingston K1CXP8-MIE 16GB

报告一个错误

更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Corsair CMY8GX3M2A2666C10 4GB

Kingston K1CXP8-MIE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

17 42
读取速度，GB/s

22.8 15.0
写入速度，GB/s

15.4 11.8
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

3391 2790

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix DDR2 800 2G 2GB

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G Skill Intl F4-3300C16-8GTZKW 8GB

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Micron Technology 16ATF2G64HZ-2G1B1 16GB

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Kingston 99U5458-008.A00LF 4GB

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Crucial Technology BL16G32C16U4W.M8FB1 16GB

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Elpida EBJ21UE8BDF0-DJ-F 2GB

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G Skill Intl F4-2933C14-16GFX 16GB

G Skill Intl F4-2933C14-16GFX 16GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Kingston MSISID4S9S8ME-8 8GB

Kingston MSISID4S9S8ME-8 8GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Corsair CMK8GX4M2A2400C14 4GB

Corsair CMK8GX4M2A2400C14 4GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Crucial Technology CT8G4SFD824A.M16FB 8GB

Crucial Technology CT8G4SFD824A.M16FB 8GB