Corsair CMY8GX3M2A2666C10 4GB vs Kingston KCDT82-MIE 4GB

总分

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分

Kingston KCDT82-MIE 4GB

Kingston KCDT82-MIE 4GB

差异规格评论

差异

Corsair CMY8GX3M2A2666C10 4GB

需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB

报告一个错误

低于PassMark测试中的延时，ns

17 38

左右 55% 更低的延时
更快的读取速度，GB/s

22.8 17

测试中的平均数值
更快的写入速度，GB/s

15.4 12.5

测试中的平均数值

Kingston KCDT82-MIE 4GB

需要考虑的原因
Kingston KCDT82-MIE 4GB

报告一个错误

更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Corsair CMY8GX3M2A2666C10 4GB

Kingston KCDT82-MIE 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

17 38
读取速度，GB/s

22.8 17.0
写入速度，GB/s

15.4 12.5
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

3391 2302

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT102464BF160B-16F 8GB

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

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Crucial Technology BL8G32C16U4W.M8FE 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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G Skill Intl F4-3200C15-16GTZR 16GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Crucial Technology CT8G4SFD824A.C16FE 8GB

Crucial Technology CT8G4SFD824A.C16FE 8GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

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Crucial Technology CT8G4SFS824A.M8FA 8GB