Corsair CMY8GX3M2A2666C10 4GB vs Lexar Co Limited LD4AU008G-H3200GST 8GB

总分

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分

Lexar Co Limited LD4AU008G-H3200GST 8GB

Lexar Co Limited LD4AU008G-H3200GST 8GB

差异规格评论

差异

Corsair CMY8GX3M2A2666C10 4GB

需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB

报告一个错误

低于PassMark测试中的延时，ns

17 34

左右 50% 更低的延时
更快的读取速度，GB/s

22.8 19.9

测试中的平均数值
更快的写入速度，GB/s

15.4 13.9

测试中的平均数值

Lexar Co Limited LD4AU008G-H3200GST 8GB

需要考虑的原因
Lexar Co Limited LD4AU008G-H3200GST 8GB

报告一个错误

更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Corsair CMY8GX3M2A2666C10 4GB

Lexar Co Limited LD4AU008G-H3200GST 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

17 34
读取速度，GB/s

22.8 19.9
写入速度，GB/s

15.4 13.9
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

3391 3271

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378A2G43MB1-CTD 16GB

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Corsair CMY8GX3M2A2666C10 4GB

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AMD R538G1601U2S 8GB

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Micron Technology 16ATF4G64HZ-2G6B2 32GB

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G Skill Intl F3-2133C9-4GAB 4GB

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Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

SK Hynix HMA81GS6CJR8N-UH 8GB

SK Hynix HMA81GS6CJR8N-UH 8GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Avant Technology W6451U67J7240NB 4GB

Avant Technology W6451U67J7240NB 4GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Crucial Technology CT8G4SFS832A.C8FP 8GB

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Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

SK Hynix HMA81GS6MFR8N-UH 8GB

SK Hynix HMA81GS6MFR8N-UH 8GB