Corsair CMY8GX3M2A2666C10 4GB vs SK Hynix HMA81GS6CJR8N-VK 8GB

总分

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分

SK Hynix HMA81GS6CJR8N-VK 8GB

SK Hynix HMA81GS6CJR8N-VK 8GB

差异规格评论

差异

Corsair CMY8GX3M2A2666C10 4GB

需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB

报告一个错误

低于PassMark测试中的延时，ns

17 35

左右 51% 更低的延时
更快的读取速度，GB/s

22.8 15.1

测试中的平均数值
更快的写入速度，GB/s

15.4 11.3

测试中的平均数值

SK Hynix HMA81GS6CJR8N-VK 8GB

需要考虑的原因
SK Hynix HMA81GS6CJR8N-VK 8GB

报告一个错误

更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CMY8GX3M2A2666C10 4GB

SK Hynix HMA81GS6CJR8N-VK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

17 35
读取速度，GB/s

22.8 15.1
写入速度，GB/s

15.4 11.3
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

3391 2631

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT32G4SFD832A.M16FB 32GB

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Samsung M378B5173BH0-CH9 4GB

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Kingston 9965604-033.D00G 16GB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

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G Skill Intl F4-4600C18-8GTRS 8GB

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Corsair CMY8GX3M2A2666C10 4GB

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SK Hynix HMA81GS6CJR8N-VK 8GB

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V-GEN D4H8GL26A8TS6 8GB

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Kingston 9905744-062.A00G 32GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

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Samsung 9905599-020.A00G 16GB

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Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

Kingston 99U5701-036.A00G 16GB

Kingston 99U5701-036.A00G 16GB