RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Corsair CMY8GX3M2A2666C10 4GB
Tanbassh 8G 2666MHZ 8GB

Corsair CMY8GX3M2A2666C10 4GB vs Tanbassh 8G 2666MHZ 8GB

总分
star star star star star
Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分
star star star star star
Tanbassh 8G 2666MHZ 8GB

Tanbassh 8G 2666MHZ 8GB

差异 规格 评论

差异

Corsair CMY8GX3M2A2666C10 4GB 需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    17 left arrow 50
    左右 66% 更低的延时
  • 更快的读取速度，GB/s
    22.8 left arrow 10.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.4 left arrow 7.5
    测试中的平均数值
Tanbassh 8G 2666MHZ 8GB 需要考虑的原因
Tanbassh 8G 2666MHZ 8GB
报告一个错误
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Corsair CMY8GX3M2A2666C10 4GB
Tanbassh 8G 2666MHZ 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    17 left arrow 50
  • 读取速度，GB/s
    22.8 left arrow 10.2
  • 写入速度，GB/s
    15.4 left arrow 7.5
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    3391 left arrow 2064

Corsair CMY8GX3M2A2666C10 4GB RAM的比较

Micron Technology 4ATF1G64AZ-3G2B1 8GB
Crucial Technology CT8G48C40U5.M4A1 8GB

Tanbassh 8G 2666MHZ 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Kingston 9905630-033.A00G 16GB
Kingston 9905630-033.A00G 16GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
Tanbassh 8G 2666MHZ 8GB
Tanbassh 8G 2666MHZ 8GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Gold Key Technology Co Ltd NMUD480E82-3000D 8GB
Gold Key Technology Co Ltd NMUD480E82-3000D 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Mushkin 99[2/7/4]192F 4GB
Mushkin 99[2/7/4]192F 4GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingmax Semiconductor GLLG42F-18---------- 8GB
Kingmax Semiconductor GLLG42F-18---------- 8GB
内存RAM
Corsair CMX4GX3M1A1333C9 4GB
Corsair CMX4GX3M1A1333C9 4GB
Kingston KHX2666C13/16GX 16GB
Kingston KHX2666C13/16GX 16GB
内存RAM
Corsair CML16GX3M2A1600C10 8GB
Corsair CML16GX3M2A1600C10 8GB
Asgard VMA45UG-MEC1U2AW2 8GB
Asgard VMA45UG-MEC1U2AW2 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology CT8G4DFD824A.C16FADP 8GB
Crucial Technology CT8G4DFD824A.C16FADP 8GB
内存RAM
AMD AE34G2139U2 4GB
AMD AE34G2139U2 4GB
Patriot Memory (PDP Systems) PSD44G240081S 4GB
Patriot Memory (PDP Systems) PSD44G240081S 4GB
内存RAM
Kingston 99P5474-014.A00LF 4GB
Kingston 99P5474-014.A00LF 4GB
G Skill Intl F4-3200C14-8GTZ 8GB
G Skill Intl F4-3200C14-8GTZ 8GB
内存RAM
Kingston ACR16D3LS1NGG/4G 4GB
Kingston ACR16D3LS1NGG/4G 4GB
Crucial Technology CT8G4SFD824A.C16FDD2 8GB
Crucial Technology CT8G4SFD824A.C16FDD2 8GB
内存RAM
Samsung M378A1K43BB1-CPB 8GB
Samsung M378A1K43BB1-CPB 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT8G4DFS832A.C8FE 8GB
Crucial Technology CT8G4DFS832A.C8FE 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 4ATF51264AZ-2G3E1 4GB
Micron Technology 4ATF51264AZ-2G3E1 4GB
内存RAM