Corsair CMY8GX3M2A2666C10 4GB vs Team Group Inc. TEAMGROUP-UD4-3200 8GB

总分

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分

Team Group Inc. TEAMGROUP-UD4-3200 8GB

Team Group Inc. TEAMGROUP-UD4-3200 8GB

差异规格评论

差异

Corsair CMY8GX3M2A2666C10 4GB

需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB

报告一个错误

低于PassMark测试中的延时，ns

17 30

左右 43% 更低的延时
更快的读取速度，GB/s

22.8 18.3

测试中的平均数值
更快的写入速度，GB/s

15.4 14.3

测试中的平均数值

Team Group Inc. TEAMGROUP-UD4-3200 8GB

需要考虑的原因
Team Group Inc. TEAMGROUP-UD4-3200 8GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMY8GX3M2A2666C10 4GB

Team Group Inc. TEAMGROUP-UD4-3200 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

17 30
读取速度，GB/s

22.8 18.3
写入速度，GB/s

15.4 14.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3391 3491

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 4ATF51264HZ-2G3E2 4GB

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Kingston 9905584-016.A00LF 4GB

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Samsung M471A2K43BB1-CRC 16GB

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Micron Technology TEAMGROUP-UD4-3000 16GB

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Neo Forza GKE160SO204808-3200 16GB

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Essencore Limited KD48GU88C-26N1600 8GB

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Golden Empire CL14-16-16 D4-3000 4GB

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Kingston KF3200C16D4/8GX 8GB

Kingston KF3200C16D4/8GX 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

G Skill Intl F4-4266C17-16GTRGB 16GB

G Skill Intl F4-4266C17-16GTRGB 16GB

Crucial Technology CT25664AA800.M16FM 2GB

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Kingston LV26D4S9S8HJ-8 8GB

Kingston LV26D4S9S8HJ-8 8GB

Mushkin 991679ES 996679ES 2GB

Mushkin 991679ES 996679ES 2GB

Crucial Technology CT16G4SFD832A.M16FJ 16GB

Crucial Technology CT16G4SFD832A.M16FJ 16GB