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Corsair CMZ16GX3M2A1866C9 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

Corsair CMZ16GX3M2A1866C9 8GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

总分
star star star star star
Corsair CMZ16GX3M2A1866C9 8GB

Corsair CMZ16GX3M2A1866C9 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

差异 规格 评论

差异

Corsair CMZ16GX3M2A1866C9 8GB 需要考虑的原因
Corsair CMZ16GX3M2A1866C9 8GB
报告一个错误
  • 更快的写入速度，GB/s
    9.0 left arrow 7.4
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 39
    左右 -56% 更低的延时
  • 更快的读取速度，GB/s
    14.2 left arrow 14
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Corsair CMZ16GX3M2A1866C9 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 25
  • 读取速度，GB/s
    14.0 left arrow 14.2
  • 写入速度，GB/s
    9.0 left arrow 7.4
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2489 left arrow 2104

Corsair CMZ16GX3M2A1866C9 8GB RAM的比较

Kingston KHX1600C10D3/8GXF 8GB
Corsair CMZ32GX3M4X1600C10 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB RAM的比较

Samsung M393B1K70QB0-CK0 8GB
Kingston 9905471-002.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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