Corsair CMZ16GX3M2A1866C9 8GB vs Kingston 9905625-062.A00G 8GB

总分

Corsair CMZ16GX3M2A1866C9 8GB

Corsair CMZ16GX3M2A1866C9 8GB

总分

Kingston 9905625-062.A00G 8GB

Kingston 9905625-062.A00G 8GB

差异规格评论

差异

Corsair CMZ16GX3M2A1866C9 8GB

需要考虑的原因
Corsair CMZ16GX3M2A1866C9 8GB

报告一个错误

Kingston 9905625-062.A00G 8GB

需要考虑的原因
Kingston 9905625-062.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 39

左右 -15% 更低的延时
更快的读取速度，GB/s

15.6 14

测试中的平均数值
更快的写入速度，GB/s

11.5 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMZ16GX3M2A1866C9 8GB

Kingston 9905625-062.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 34
读取速度，GB/s

14.0 15.6
写入速度，GB/s

9.0 11.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2489 2776

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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A-DATA Technology DQKD1A08 1GB

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Corsair CMSX16GX4M2A3000C16 8GB

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Crucial Technology BLS4G4D240FSB.M8FADG 4GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Micron Technology 8ATF1G64HZ-2G3B2 8GB

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G Skill Intl F4-2800C15-4GTZB 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

V-Color Technology Inc. TL48G32S8KSRGB16 8GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Corsair CMT64GX4M4K3600C16 16GB

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Kingston 99U5471-056.A00LF 8GB

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Wilk Elektronik S.A. IRH3000D464L16S/8G 8GB

Wilk Elektronik S.A. IRH3000D464L16S/8G 8GB

SpecTek Incorporated PSD34G13332 4GB

SpecTek Incorporated PSD34G13332 4GB

Crucial Technology CT8G4SFD8213.C16FBD1 8GB

Crucial Technology CT8G4SFD8213.C16FBD1 8GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Samsung M474A1G43DB0-CPB 8GB

Samsung M474A1G43DB0-CPB 8GB