Corsair CMZ16GX3M2A1866C9 8GB vs Super Talent F24UB16GV 16GB

总分

Corsair CMZ16GX3M2A1866C9 8GB

Corsair CMZ16GX3M2A1866C9 8GB

总分

Super Talent F24UB16GV 16GB

Super Talent F24UB16GV 16GB

差异规格评论

差异

Corsair CMZ16GX3M2A1866C9 8GB

需要考虑的原因
Corsair CMZ16GX3M2A1866C9 8GB

报告一个错误

Super Talent F24UB16GV 16GB

需要考虑的原因
Super Talent F24UB16GV 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 39

左右 -63% 更低的延时
更快的读取速度，GB/s

16 14

测试中的平均数值
更快的写入速度，GB/s

13.0 9.0

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CMZ16GX3M2A1866C9 8GB

Super Talent F24UB16GV 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 24
读取速度，GB/s

14.0 16.0
写入速度，GB/s

9.0 13.0
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-19200, 1.2V, CAS Supported: 13 14 15 16 17
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2489 3046

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 99U5471-020.A00LF 4GB

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Kingston KHX2933C17S4/32G 32GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

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Avexir Technologies Corporation T 4GB

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Samsung M471B5273DH0-CK0 4GB

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Corsair CMW32GX4M2Z3600C14 16GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

NSITEXE Inc Visenta 16GB

NSITEXE Inc Visenta 16GB

Micron Technology 8ATF1G64HZ-3G2R1 8GB

Micron Technology 8ATF1G64HZ-3G2R1 8GB

Samsung M471A1G44BB0-CWE 8GB

Samsung M471A1G44BB0-CWE 8GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

G Skill Intl F4-4800C19-8GTZRC 8GB

G Skill Intl F4-4800C19-8GTZRC 8GB