Corsair CMZ16GX3M2A2400C10 8GB vs Corsair CMD64GX4M8X3800C19 8GB

总分

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

总分

Corsair CMD64GX4M8X3800C19 8GB

Corsair CMD64GX4M8X3800C19 8GB

差异规格评论

差异

Corsair CMZ16GX3M2A2400C10 8GB

需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB

报告一个错误

Corsair CMD64GX4M8X3800C19 8GB

需要考虑的原因
Corsair CMD64GX4M8X3800C19 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 37

左右 -19% 更低的延时
更快的读取速度，GB/s

11.6 11.4

测试中的平均数值
更快的写入速度，GB/s

13.2 7.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMD64GX4M8X3800C19 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 31
读取速度，GB/s

11.4 11.6
写入速度，GB/s

7.4 13.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1683 2783

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMD64GX4M8X3800C19 8GB

Corsair CMD64GX4M8X3800C19 8GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Kingston KHX2133C13D4/4GX 4GB

Kingston KHX2133C13D4/4GX 4GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Gloway International (HK) STK4U2400D17082C 8GB

Gloway International (HK) STK4U2400D17082C 8GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Kingston KHX3466C19D4/16G 16GB

Kingston KHX3466C19D4/16G 16GB

Kingston 9905316-106.A02LF 1GB

Kingston 9905316-106.A02LF 1GB

Micron Technology 18ASF2G72AZ-2G1B1 16GB

Micron Technology 18ASF2G72AZ-2G1B1 16GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Crucial Technology CT8G4DFS824A.M8FR 8GB

Crucial Technology CT8G4DFS824A.M8FR 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Kingston KHX3600C18D4/32GX 32GB

Kingston KHX3600C18D4/32GX 32GB

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

Samsung M474A4G43MB1-CTD 32GB

Samsung M474A4G43MB1-CTD 32GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Panram International Corporation PUD42400C154GNJW 4GB

Panram International Corporation PUD42400C154GNJW 4GB

Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

Kingston KF2666C13D4/8GX 8GB

Kingston KF2666C13D4/8GX 8GB

Smart Modular SF564128CJ8N6NNSEG 4GB

Smart Modular SF564128CJ8N6NNSEG 4GB

G Skill Intl F4-4266C19-8GTZA 8GB

G Skill Intl F4-4266C19-8GTZA 8GB

SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

Crucial Technology BLT8G4D30BET4K.C8FD 8GB

Crucial Technology BLT8G4D30BET4K.C8FD 8GB