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Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology CT16G4SFRA266.M8FB 16GB
比较
Corsair CMZ16GX3M2A2400C10 8GB vs Crucial Technology CT16G4SFRA266.M8FB 16GB
总分
Corsair CMZ16GX3M2A2400C10 8GB
总分
Crucial Technology CT16G4SFRA266.M8FB 16GB
差异
规格
评论
差异
需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB
报告一个错误
需要考虑的原因
Crucial Technology CT16G4SFRA266.M8FB 16GB
报告一个错误
低于PassMark测试中的延时,ns
31
37
左右 -19% 更低的延时
更快的读取速度,GB/s
15.2
11.4
测试中的平均数值
更快的写入速度,GB/s
13.2
7.4
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology CT16G4SFRA266.M8FB 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
37
31
读取速度,GB/s
11.4
15.2
写入速度,GB/s
7.4
13.2
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 9
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1683
3217
Corsair CMZ16GX3M2A2400C10 8GB RAM的比较
G Skill Intl F3-2400C11-8-SR 8GB
Corsair CMY16GX3M2A2400C11 8GB
Crucial Technology CT16G4SFRA266.M8FB 16GB RAM的比较
Smart Modular SH564128FH8NZQNSCG 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology CT16G4SFRA266.M8FB 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
Crucial Technology CT8G4SFRA32A.C16FG 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3300C16-4GRKD 4GB
Apacer Technology 78.01G86.9H50C 1GB
GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200
Kingston ACR16D3LS1NGG/2G 2GB
Golden Empire CL16-16-16 D4-3200 4GB
Team Group Inc. Team-Elite-1333 4GB
SK Hynix HMA82GS7AFR8N-UH 16GB
Kingston 9905403-444.A00LF 4GB
Apacer Technology 78.D1GMM.AU10B 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Patriot Memory (PDP Systems) 4000 C16 Series 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 16ATF4G64HZ-3G2E1 32GB
A-DATA Technology DQVE1908 512MB
Crucial Technology BL16G32C16U4BL.M16FE 16GB
A-DATA Technology DQVE1908 512MB
Crucial Technology BLE8G4D32BEEAK.K8FB 8GB
Samsung M4 70T2953EZ3-CE6 1GB
Kingston 9905678-156.A00G 8GB
Kingston 9965525-018.A00LF 4GB
Wilk Elektronik S.A. GR2666D464L19/16GN 16GB
报告一个错误
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Bug description
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