Corsair CMZ16GX3M2A2400C10 8GB vs Crucial Technology CT4G4DFS8213.C8FBD1 4GB

总分

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

总分

Crucial Technology CT4G4DFS8213.C8FBD1 4GB

Crucial Technology CT4G4DFS8213.C8FBD1 4GB

差异规格评论

差异

Corsair CMZ16GX3M2A2400C10 8GB

需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB

报告一个错误

Crucial Technology CT4G4DFS8213.C8FBD1 4GB

需要考虑的原因
Crucial Technology CT4G4DFS8213.C8FBD1 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 37

左右 -54% 更低的延时
更快的读取速度，GB/s

15.5 11.4

测试中的平均数值
更快的写入速度，GB/s

11.1 7.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMZ16GX3M2A2400C10 8GB

Crucial Technology CT4G4DFS8213.C8FBD1 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 24
读取速度，GB/s

11.4 15.5
写入速度，GB/s

7.4 11.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1683 2484

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Kingston K531R8-MIN 4GB

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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

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Corsair CM4X8GE2133C13K4 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

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SK Hynix HMA81GS6AFR8N-UH 8GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Patriot Memory (PDP Systems) 3400 C16 Series 8GB

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Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology BLS8G4D240FSB.M16FBD 8GB

Crucial Technology BLS8G4D240FSB.M16FBD 8GB