Corsair CMZ16GX3M2A2400C10 8GB vs G Skill Intl F4-2666C15-8GRR 8GB

总分

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

总分

G Skill Intl F4-2666C15-8GRR 8GB

G Skill Intl F4-2666C15-8GRR 8GB

差异规格评论

差异

Corsair CMZ16GX3M2A2400C10 8GB

需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB

报告一个错误

G Skill Intl F4-2666C15-8GRR 8GB

需要考虑的原因
G Skill Intl F4-2666C15-8GRR 8GB

报告一个错误

低于PassMark测试中的延时，ns

35 37

左右 -6% 更低的延时
更快的读取速度，GB/s

15.8 11.4

测试中的平均数值
更快的写入速度，GB/s

12.2 7.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMZ16GX3M2A2400C10 8GB

G Skill Intl F4-2666C15-8GRR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 35
读取速度，GB/s

11.4 15.8
写入速度，GB/s

7.4 12.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1683 3052

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

G Skill Intl F4-2666C15-8GRR 8GB

G Skill Intl F4-2666C15-8GRR 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Apacer Technology 78.DAGP2.4030B 16GB

Apacer Technology 78.DAGP2.4030B 16GB

Kingston 9905471-076.A00LF 8GB

Kingston 9905471-076.A00LF 8GB

Corsair CMK8GX4M2A2666C16 4GB

Corsair CMK8GX4M2A2666C16 4GB

Corsair CMZ16GX3M2A1866C9 8GB

Corsair CMZ16GX3M2A1866C9 8GB

Micron Technology 9ASF51272PZ-2G1B1 4GB

Micron Technology 9ASF51272PZ-2G1B1 4GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Avant Technology J642GU42J5213NF 16GB

Avant Technology J642GU42J5213NF 16GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Corsair CMD128GX4M8B2800C14 16GB

Corsair CMD128GX4M8B2800C14 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology BLT8G4D26BFT4K.C8FD 8GB

Crucial Technology BLT8G4D26BFT4K.C8FD 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Kingston 9965596-035.B00G 4GB

Kingston 9965596-035.B00G 4GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

G Skill Intl F4-3600C18-32GTZN 32GB

G Skill Intl F4-3600C18-32GTZN 32GB

Ramaxel Technology RMT3010EC58E8F1333 2GB

Ramaxel Technology RMT3010EC58E8F1333 2GB

Apacer Technology 78.CAGQE.C750B 8GB

Apacer Technology 78.CAGQE.C750B 8GB

Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

Kingston XK2M26-MIE 16GB

Kingston XK2M26-MIE 16GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

V-Color Technology Inc. TL8G36818D-E6PRSWK 8GB

V-Color Technology Inc. TL8G36818D-E6PRSWK 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston KVR26N19D8/16 16GB

Kingston KVR26N19D8/16 16GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Kingston 9905711-002.A00G 4GB

Kingston 9905711-002.A00G 4GB