Corsair CMZ16GX3M2A2400C10 8GB vs G Skill Intl F4-3200C14-8GTZSW 8GB

总分

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

总分

G Skill Intl F4-3200C14-8GTZSW 8GB

G Skill Intl F4-3200C14-8GTZSW 8GB

差异规格评论

差异

Corsair CMZ16GX3M2A2400C10 8GB

需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB

报告一个错误

G Skill Intl F4-3200C14-8GTZSW 8GB

需要考虑的原因
G Skill Intl F4-3200C14-8GTZSW 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 37

左右 -16% 更低的延时
更快的读取速度，GB/s

15.6 11.4

测试中的平均数值
更快的写入速度，GB/s

13.2 7.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMZ16GX3M2A2400C10 8GB

G Skill Intl F4-3200C14-8GTZSW 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 32
读取速度，GB/s

11.4 15.6
写入速度，GB/s

7.4 13.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1683 3000

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Ramaxel Technology RMT3170EB68F9W1600 4GB

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Samsung M471B1G73DB0-YK0 8GB

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Wilk Elektronik S.A. GR2133S464L15S/8G 8GB

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Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

Samsung M378A2G43MX3-CTD 16GB

Samsung M378A2G43MX3-CTD 16GB

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Hexon Technology Pte Ltd HEXON 1GB

SK Hynix HMA851U6DJR6N-WM 4GB

SK Hynix HMA851U6DJR6N-WM 4GB

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A-DATA Technology AD73I1C1674EV 4GB

Kingston 9905734-102.A00G 32GB

Kingston 9905734-102.A00G 32GB