Corsair CMZ16GX3M2A2400C10 8GB vs G Skill Intl F4-4000C19-16GTRG 16GB

总分

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

总分

G Skill Intl F4-4000C19-16GTRG 16GB

G Skill Intl F4-4000C19-16GTRG 16GB

差异规格评论

差异

Corsair CMZ16GX3M2A2400C10 8GB

需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB

报告一个错误

G Skill Intl F4-4000C19-16GTRG 16GB

需要考虑的原因
G Skill Intl F4-4000C19-16GTRG 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 37

左右 -54% 更低的延时
更快的读取速度，GB/s

19.4 11.4

测试中的平均数值
更快的写入速度，GB/s

18.9 7.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMZ16GX3M2A2400C10 8GB

G Skill Intl F4-4000C19-16GTRG 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 24
读取速度，GB/s

11.4 19.4
写入速度，GB/s

7.4 18.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1683 4219

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Crucial Technology CT8G4SFRA32A.M8FJ 8GB

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Kingston 99U5584-017.A00LF 4GB

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Kingston 9905743-034.A00G 8GB

Kingston 9905743-034.A00G 8GB

Team Group Inc. Vulcan-1600 4GB

Team Group Inc. Vulcan-1600 4GB

Kingston 99U5702-095.A00G 8GB

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SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

G Skill Intl F4-2400C16-8GRSB 8GB

G Skill Intl F4-2400C16-8GRSB 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Kingston 9905711-017.A00G 4GB

Kingston 9905711-017.A00G 4GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

SK Hynix HMA82GR7AFR4N-VK 16GB

SK Hynix HMA82GR7AFR4N-VK 16GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Crucial Technology CT8G4DFD8213.C16FAR2 8GB

Crucial Technology CT8G4DFD8213.C16FAR2 8GB

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Crucial Technology CT16G4DFRA32A.M16FJ1 16GB

Crucial Technology CT16G4DFRA32A.M16FJ1 16GB

G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F4-3200C14-32GVK 32GB

G Skill Intl F4-3200C14-32GVK 32GB

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

Crucial Technology BLS16G4D26BFSE.16FBD 16GB

Crucial Technology BLS16G4D26BFSE.16FBD 16GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Micron Technology 4ATF51264AZ-3G2E1 4GB

Micron Technology 4ATF51264AZ-3G2E1 4GB

Kingston HP669238-071-HYC 4GB

Kingston HP669238-071-HYC 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N