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Corsair CMZ16GX3M2A2400C10 8GB
InnoDisk Corporation M4S0-4GSSNCIK 4GB

Corsair CMZ16GX3M2A2400C10 8GB vs InnoDisk Corporation M4S0-4GSSNCIK 4GB

总分
star star star star star
Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

总分
star star star star star
InnoDisk Corporation M4S0-4GSSNCIK 4GB

InnoDisk Corporation M4S0-4GSSNCIK 4GB

差异 规格 评论

差异

Corsair CMZ16GX3M2A2400C10 8GB 需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 85
    左右 56% 更低的延时
  • 更快的读取速度，GB/s
    11.4 left arrow 11.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.4 left arrow 6.0
    测试中的平均数值
InnoDisk Corporation M4S0-4GSSNCIK 4GB 需要考虑的原因
InnoDisk Corporation M4S0-4GSSNCIK 4GB
报告一个错误
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Corsair CMZ16GX3M2A2400C10 8GB
InnoDisk Corporation M4S0-4GSSNCIK 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 85
  • 读取速度，GB/s
    11.4 left arrow 11.3
  • 写入速度，GB/s
    7.4 left arrow 6.0
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1683 left arrow 1118

Corsair CMZ16GX3M2A2400C10 8GB RAM的比较

G Skill Intl F3-2400C11-8-SR 8GB
Corsair CMY16GX3M2A2400C11 8GB

InnoDisk Corporation M4S0-4GSSNCIK 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
InnoDisk Corporation M4S0-4GSSNCIK 4GB
InnoDisk Corporation M4S0-4GSSNCIK 4GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT8G4SFS824A.C8FBD1 8GB
Crucial Technology CT8G4SFS824A.C8FBD1 8GB
内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
G Skill Intl F4-3600C18-8GTZN 8GB
G Skill Intl F4-3600C18-8GTZN 8GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Kingston 9965640-001.C00G 16GB
Kingston 9965640-001.C00G 16GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
A Force Manufacturing Ltd. UD-01G64V2133P 8GB
A Force Manufacturing Ltd. UD-01G64V2133P 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingston 99U5665-004.A00G 4GB
Kingston 99U5665-004.A00G 4GB
内存RAM
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston KHX2400C14D4/16G 16GB
Kingston KHX2400C14D4/16G 16GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N
内存RAM
Kingston 99C5316-026.A00LF 1GB
Kingston 99C5316-026.A00LF 1GB
Kingston 9905316-005.A04LF 1GB
Kingston 9905316-005.A04LF 1GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Kingston KHX2133C14D4/4G 4GB
Kingston KHX2133C14D4/4G 4GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Kingston 9965698-001.A00G 16GB
Kingston 9965698-001.A00G 16GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
EVGA 16G-D4-2800-MR 4GB
EVGA 16G-D4-2800-MR 4GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
Patriot Memory (PDP Systems) 3200 C18 Series 8GB
Patriot Memory (PDP Systems) 3200 C18 Series 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Avant Technology W641GU42J7240NC 8GB
Avant Technology W641GU42J7240NC 8GB
内存RAM