Corsair CMZ16GX3M2A2400C10 8GB vs Kingston 9905713-008.A00G 4GB

总分

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

总分

Kingston 9905713-008.A00G 4GB

Kingston 9905713-008.A00G 4GB

差异规格评论

差异

Corsair CMZ16GX3M2A2400C10 8GB

需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB

报告一个错误

更快的写入速度，GB/s

7.4 5.6

测试中的平均数值

Kingston 9905713-008.A00G 4GB

需要考虑的原因
Kingston 9905713-008.A00G 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 37

左右 -42% 更低的延时
更快的读取速度，GB/s

12.2 11.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CMZ16GX3M2A2400C10 8GB

Kingston 9905713-008.A00G 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 26
读取速度，GB/s

11.4 12.2
写入速度，GB/s

7.4 5.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1683 1970

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B1G70BH0-YK0 8GB

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Crucial Technology BLS8G4D240FSB.M16FAD 8GB

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Kingston MSI24D4S7D8MB-16 16GB

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Samsung M4 70T2953EZ3-CE6 1GB

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Crucial Technology BLE8G4D30AEEA.K16FD 8GB

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OCZ OCZ2V8002G 2GB

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Corsair CMK32GX5M2B5600C36 16GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Corsair CMD8GX3M2A2800C12 4GB

Corsair CMD8GX3M2A2800C12 4GB

Corsair CMR32GX4M2C3333C16 16GB

Corsair CMR32GX4M2C3333C16 16GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

G Skill Intl F4-3200C16-8GSX 8GB

G Skill Intl F4-3200C16-8GSX 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

SK Hynix HMA81GR7AFR8N-VK 8GB

SK Hynix HMA81GR7AFR8N-VK 8GB

Kingston ACR16D3LS1KNG/4G 4GB

Kingston ACR16D3LS1KNG/4G 4GB

Ramaxel Technology RMUA5180ME78HBF-2666 16GB

Ramaxel Technology RMUA5180ME78HBF-2666 16GB

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

Kingston MSI24D4S7S7MH-16 16GB

Kingston MSI24D4S7S7MH-16 16GB