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Corsair CMZ16GX3M2A2400C10 8GB
Samsung M471A2K43BB1-CTD 16GB

Corsair CMZ16GX3M2A2400C10 8GB vs Samsung M471A2K43BB1-CTD 16GB

总分
star star star star star
Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

总分
star star star star star
Samsung M471A2K43BB1-CTD 16GB

Samsung M471A2K43BB1-CTD 16GB

差异 规格 评论

差异

Corsair CMZ16GX3M2A2400C10 8GB 需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB
报告一个错误
Samsung M471A2K43BB1-CTD 16GB 需要考虑的原因
Samsung M471A2K43BB1-CTD 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 37
    左右 -61% 更低的延时
  • 更快的读取速度，GB/s
    17 left arrow 11.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.7 left arrow 7.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Corsair CMZ16GX3M2A2400C10 8GB
Samsung M471A2K43BB1-CTD 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 23
  • 读取速度，GB/s
    11.4 left arrow 17.0
  • 写入速度，GB/s
    7.4 left arrow 14.7
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1683 left arrow 3156

Corsair CMZ16GX3M2A2400C10 8GB RAM的比较

G Skill Intl F3-2400C11-8-SR 8GB
Corsair CMY16GX3M2A2400C11 8GB

Samsung M471A2K43BB1-CTD 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Tanbassh 8G 2666MHZ 8GB
Tanbassh 8G 2666MHZ 8GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
G Skill Intl F4-2666C15-8GRR 8GB
G Skill Intl F4-2666C15-8GRR 8GB
内存RAM
Kingston 9905403-038.A00LF 4GB
Kingston 9905403-038.A00LF 4GB
Teikon TMA81GS6AFR8N-UHSC 8GB
Teikon TMA81GS6AFR8N-UHSC 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Crucial Technology BL16G26C16U4W.16FE 16GB
Crucial Technology BL16G26C16U4W.16FE 16GB
内存RAM
SK Hynix HYMP125S64CP8-S6 2GB
SK Hynix HYMP125S64CP8-S6 2GB
A-DATA Technology AO1P26KC8T1-BXPS 8GB
A-DATA Technology AO1P26KC8T1-BXPS 8GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
G Skill Intl F4-3000C15-16GTZ 16GB
G Skill Intl F4-3000C15-16GTZ 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2666C19-8GNT 8GB
G Skill Intl F4-2666C19-8GNT 8GB
内存RAM
AMD AE34G2139U2 4GB
AMD AE34G2139U2 4GB
Heoriady M471A1K43BB1-CRC 16GB
Heoriady M471A1K43BB1-CRC 16GB
内存RAM
Kingston 99U5428-018.A00LF 8GB
Kingston 99U5428-018.A00LF 8GB
G Skill Intl F4-2666C15-8GVB 8GB
G Skill Intl F4-2666C15-8GVB 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT4G4DFS8213.8FA11 4GB
Crucial Technology CT4G4DFS8213.8FA11 4GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Crucial Technology CT8G4SFS8266.M8FE 8GB
Crucial Technology CT8G4SFS8266.M8FE 8GB
内存RAM
Kingston KHX1600C9S3L/8G 8GB
Kingston KHX1600C9S3L/8G 8GB
Samsung M391A1G43EB1-CRC 8GB
Samsung M391A1G43EB1-CRC 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Smart Modular SF464128CKHI6DFSEG 4GB
Smart Modular SF464128CKHI6DFSEG 4GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Essencore Limited KD4AGU880-32A160T 16GB
Essencore Limited KD4AGU880-32A160T 16GB
内存RAM