RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Corsair CMZ16GX3M2A2400C10 8GB
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB
比较
Corsair CMZ16GX3M2A2400C10 8GB vs Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB
总分
Corsair CMZ16GX3M2A2400C10 8GB
总分
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB
差异
规格
评论
差异
需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB
报告一个错误
需要考虑的原因
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB
报告一个错误
低于PassMark测试中的延时,ns
27
37
左右 -37% 更低的延时
更快的读取速度,GB/s
20.6
11.4
测试中的平均数值
更快的写入速度,GB/s
18.4
7.4
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Corsair CMZ16GX3M2A2400C10 8GB
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
37
27
读取速度,GB/s
11.4
20.6
写入速度,GB/s
7.4
18.4
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1683
3826
Corsair CMZ16GX3M2A2400C10 8GB RAM的比较
G Skill Intl F3-2400C11-8-SR 8GB
Corsair CMY16GX3M2A2400C11 8GB
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Corsair CMZ16GX3M2A2400C10 8GB
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Micron Technology 4ATF51264AZ-3G2J1 4GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology BLS4G4D240FSB.8FBD2 4GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9965669-019.A00G 16GB
Kingston 9905403-444.A00LF 4GB
Micron Technology 8ATF1G64HZ-2G6B1 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Golden Empire CL15-17-17 D4-3200 8GB
SK Hynix HMT425S6CFR6A-PB 2GB
Crucial Technology BLS8G4S26BFSD.16FBR2 8GB
G Skill Intl F5-5600J4040C16G 16GB
Gloway International (HK) STKD4XMP2400-F 4GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Samsung V-GeN D4S8GL32A8TL 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Micron Technology 36ASF2G72PZ-2G3A3 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMD16GX4M4B3600C18 4GB
Kingston KHX1866C10D3/4G 4GB
Micron Technology 16ATF2G64HZ-2G3H1 16GB
报告一个错误
×
Bug description
Source link