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Corsair VS1GB800D2 1GB
Crucial Technology CT8G4SFS8266.M8FB 8GB

Corsair VS1GB800D2 1GB vs Crucial Technology CT8G4SFS8266.M8FB 8GB

总分
star star star star star
Corsair VS1GB800D2 1GB

Corsair VS1GB800D2 1GB

总分
star star star star star
Crucial Technology CT8G4SFS8266.M8FB 8GB

Crucial Technology CT8G4SFS8266.M8FB 8GB

差异 规格 评论

差异

Corsair VS1GB800D2 1GB 需要考虑的原因
Corsair VS1GB800D2 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 14.8
    测试中的平均数值
Crucial Technology CT8G4SFS8266.M8FB 8GB 需要考虑的原因
Crucial Technology CT8G4SFS8266.M8FB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 47
    左右 -34% 更低的延时
  • 更快的写入速度，GB/s
    6.8 left arrow 1,361.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Corsair VS1GB800D2 1GB
Crucial Technology CT8G4SFS8266.M8FB 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    47 left arrow 35
  • 读取速度，GB/s
    4,680.7 left arrow 14.8
  • 写入速度，GB/s
    1,361.1 left arrow 6.8
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    460 left arrow 2091

Corsair VS1GB800D2 1GB RAM的比较

Unifosa Corporation GU342G0ALEPR692C6F 2GB
G Skill Intl F4-3200C15-16GVR 16GB

Crucial Technology CT8G4SFS8266.M8FB 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1K70CH0-CH9 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Corsair VS1GB800D2 1GB
Corsair VS1GB800D2 1GB
Crucial Technology CT8G4SFS8266.M8FB 8GB
Crucial Technology CT8G4SFS8266.M8FB 8GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB
Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Transcend Information JM2666HLB-8G 8GB
Transcend Information JM2666HLB-8G 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CB8GU2400.C8D 8GB
Crucial Technology CB8GU2400.C8D 8GB
内存RAM
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Corsair CMD16GX4M4B3000C15 4GB
Corsair CMD16GX4M4B3000C15 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT16G4SFD8213.M16FB 16GB
Crucial Technology CT16G4SFD8213.M16FB 16GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Samsung M393A2K43BB1-CRCA1 16GB
Samsung M393A2K43BB1-CRCA1 16GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Maxsun MSD48G26Q3 8GB
Maxsun MSD48G26Q3 8GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Kingston HP26D4U9S8MD-8 8GB
Kingston HP26D4U9S8MD-8 8GB
内存RAM
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
Kllisre 8ATF1G64AZ-2G6H1 8GB
Kllisre 8ATF1G64AZ-2G6H1 8GB
内存RAM
Samsung M393B2G70AH0-YH9 16GB
Samsung M393B2G70AH0-YH9 16GB
Crucial Technology CT16G4SFRA32A.C8FB 16GB
Crucial Technology CT16G4SFRA32A.C8FB 16GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
G Skill Intl F4-4400C18-8GTZRC 8GB
G Skill Intl F4-4400C18-8GTZRC 8GB
内存RAM
Kingston KHX1600C9S3L/8G 8GB
Kingston KHX1600C9S3L/8G 8GB
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB
内存RAM