Corsair VS1GB800D2 1GB vs Kingston X3XCFP-HYA 8GB

总分

Corsair VS1GB800D2 1GB

Corsair VS1GB800D2 1GB

总分

Kingston X3XCFP-HYA 8GB

Kingston X3XCFP-HYA 8GB

差异规格评论

差异

Corsair VS1GB800D2 1GB

需要考虑的原因
Corsair VS1GB800D2 1GB

报告一个错误

更快的读取速度，GB/s

4 17.6

测试中的平均数值

Kingston X3XCFP-HYA 8GB

需要考虑的原因
Kingston X3XCFP-HYA 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 47

左右 -114% 更低的延时
更快的写入速度，GB/s

13.3 1,361.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Corsair VS1GB800D2 1GB

Kingston X3XCFP-HYA 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

47 22
读取速度，GB/s

4,680.7 17.6
写入速度，GB/s

1,361.1 13.3
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

460 3028

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMWX16GC3200C16W4 16GB

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A-DATA Technology AM2L16BC4R1-B0CS 4GB

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Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

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Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Corsair CMT16GX4M2C3200C14 8GB

Corsair CMT16GX4M2C3200C14 8GB

Team Group Inc. Vulcan-1600 4GB

Team Group Inc. Vulcan-1600 4GB

Samsung M378A5143EB1-CPB 4GB

Samsung M378A5143EB1-CPB 4GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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G Skill Intl F4-2133C15-4GNT 4GB

Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

G Skill Intl F4-4266C17-16GTZRB 16GB

G Skill Intl F4-4266C17-16GTZRB 16GB

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Samsung M395T2863QZ4-CF76 1GB

Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB