Corsair VS1GB800D2 1GB vs Kingston X3XCFP-HYA 8GB

总分

Corsair VS1GB800D2 1GB

Corsair VS1GB800D2 1GB

总分

Kingston X3XCFP-HYA 8GB

Kingston X3XCFP-HYA 8GB

差异规格评论

差异

Corsair VS1GB800D2 1GB

需要考虑的原因
Corsair VS1GB800D2 1GB

报告一个错误

更快的读取速度，GB/s

4 17.6

测试中的平均数值

Kingston X3XCFP-HYA 8GB

需要考虑的原因
Kingston X3XCFP-HYA 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 47

左右 -114% 更低的延时
更快的写入速度，GB/s

13.3 1,361.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Corsair VS1GB800D2 1GB

Kingston X3XCFP-HYA 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

47 22
读取速度，GB/s

4,680.7 17.6
写入速度，GB/s

1,361.1 13.3
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

460 3028

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

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G Skill Intl F4-4133C19-8GTZRF 8GB

Samsung M393B1K70CH0-CH9 8GB

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Panram International Corporation PUD43000C154G4NJW 4GB

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Crucial Technology CT16G4DFRA266.C8FB 16GB

Crucial Technology CT16G4DFRA266.C8FB 16GB

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Crucial Technology CT25664BA160B.C16F 2GB

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Kingston K1N7HK-ELC 2GB

Kingston K1N7HK-ELC 2GB

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Apacer Technology 78.DAGRL.4050C 16GB

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Samsung M471B5273DH0-CK0 4GB

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Wilk Elektronik S.A. IRH2666D464L19S/8G 8GB

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Samsung M378A1K43DB2-CTD 8GB

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G Skill Intl F5-5600J4040C16G 16GB

Kingston KF3200C16D4/16GX 16GB

Kingston KF3200C16D4/16GX 16GB

Kingston KF3200C16D4/16GX 16GB

Kingston KF3200C16D4/16GX 16GB

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Samsung M471B5673FH0-CF8 2GB

Ramaxel Technology RMSA3330MJ78HBF-3200 16GB

Ramaxel Technology RMSA3330MJ78HBF-3200 16GB