Corsair VS2GB1333D4 2GB vs Asgard VML41UG-MIC1U22T1 8GB

总分

Corsair VS2GB1333D4 2GB

Corsair VS2GB1333D4 2GB

总分

Asgard VML41UG-MIC1U22T1 8GB

Asgard VML41UG-MIC1U22T1 8GB

差异规格评论

差异

Corsair VS2GB1333D4 2GB

需要考虑的原因
Corsair VS2GB1333D4 2GB

报告一个错误

低于PassMark测试中的延时，ns

25 65

左右 62% 更低的延时

Asgard VML41UG-MIC1U22T1 8GB

需要考虑的原因
Asgard VML41UG-MIC1U22T1 8GB

报告一个错误

更快的读取速度，GB/s

16.4 12.9

测试中的平均数值
更快的写入速度，GB/s

8.4 7.9

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair VS2GB1333D4 2GB

Asgard VML41UG-MIC1U22T1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 65
读取速度，GB/s

12.9 16.4
写入速度，GB/s

7.9 8.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1947 2041

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B1K70CH0-CH9 8GB

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SK Hynix HMA82GU6DJR8N-XN 16GB

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Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

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SK Hynix DDR2 800 2G 2GB

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Kingston KMKYF9-MID 8GB

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Mushkin 991586 2GB

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G Skill Intl F4-3600C17-16GTZR 16GB