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Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Asgard VML41UG-MIC1U22T1 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB vs Asgard VML41UG-MIC1U22T1 8GB

总分
star star star star star
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

总分
star star star star star
Asgard VML41UG-MIC1U22T1 8GB

Asgard VML41UG-MIC1U22T1 8GB

差异 规格 评论

差异

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB 需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 65
    左右 66% 更低的延时
  • 更快的读取速度，GB/s
    17.7 left arrow 16.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.7 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 19200
    左右 1.11% 更高的带宽
Asgard VML41UG-MIC1U22T1 8GB 需要考虑的原因
Asgard VML41UG-MIC1U22T1 8GB
报告一个错误

规格

完整的技术规格清单
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Asgard VML41UG-MIC1U22T1 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    22 left arrow 65
  • 读取速度，GB/s
    17.7 left arrow 16.4
  • 写入速度，GB/s
    12.7 left arrow 8.4
  • 内存带宽，mbps
    21300 left arrow 19200
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    3075 left arrow 2041

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB RAM的比较

Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB

Asgard VML41UG-MIC1U22T1 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Asgard VML41UG-MIC1U22T1 8GB
Asgard VML41UG-MIC1U22T1 8GB
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