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Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Asgard VML41UG-MIC1U22T1 8GB
Compare
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB vs Asgard VML41UG-MIC1U22T1 8GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Overall score
Asgard VML41UG-MIC1U22T1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Report a bug
Below the latency in the PassMark tests, ns
22
65
Around 66% lower latency
Faster reading speed, GB/s
17.7
16.4
Average value in the tests
Faster write speed, GB/s
12.7
8.4
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11% higher bandwidth
Reasons to consider
Asgard VML41UG-MIC1U22T1 8GB
Report a bug
Specifications
Complete list of technical specifications
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Asgard VML41UG-MIC1U22T1 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
22
65
Read speed, GB/s
17.7
16.4
Write speed, GB/s
12.7
8.4
Memory bandwidth, mbps
21300
19200
Other
Description
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
3075
2041
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB RAM comparisons
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
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Asgard VML41UG-MIC1U22T1 8GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2
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