Corsair VSA2GSDS667C4 2GB vs Corsair CMW16GX4M1Z3600C18 16GB

总分

Corsair VSA2GSDS667C4 2GB

Corsair VSA2GSDS667C4 2GB

总分

Corsair CMW16GX4M1Z3600C18 16GB

Corsair CMW16GX4M1Z3600C18 16GB

差异规格评论

差异

Corsair VSA2GSDS667C4 2GB

需要考虑的原因
Corsair VSA2GSDS667C4 2GB

报告一个错误

更快的读取速度，GB/s

4 17.7

测试中的平均数值

Corsair CMW16GX4M1Z3600C18 16GB

需要考虑的原因
Corsair CMW16GX4M1Z3600C18 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 51

左右 -76% 更低的延时
更快的写入速度，GB/s

13.6 1,839.1

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Corsair VSA2GSDS667C4 2GB

Corsair CMW16GX4M1Z3600C18 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

51 29
读取速度，GB/s

4,246.9 17.7
写入速度，GB/s

1,839.1 13.6
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 4 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

721 3483

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Micron Technology 16ATF1G64HZ-2G1B1 8GB

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Crucial Technology CT16G4DFD8266.C16FJ 16GB

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TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

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Corsair CMSO16GX4M2A2133C15 8GB

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Apacer Technology AQD-D4U8GN24-SE 8GB

Kingston 99U5665-001.A00G 4GB

Kingston 99U5665-001.A00G 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

G Skill Intl F4-3200C16-16GRS 16GB

G Skill Intl F4-3200C16-16GRS 16GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Crucial Technology CT4G4DFS8266.C8FG 4GB

Crucial Technology CT4G4DFS8266.C8FG 4GB

Micron Technology TEAMGROUP-UD4-3000 16GB

Micron Technology TEAMGROUP-UD4-3000 16GB

Corsair CM5S16GM4800A40K2 16GB

Corsair CM5S16GM4800A40K2 16GB