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Corsair VSA2GSDS667C4 2GB
Panram International Corporation D4N2666PS-16G 16GB

Corsair VSA2GSDS667C4 2GB vs Panram International Corporation D4N2666PS-16G 16GB

总分
star star star star star
Corsair VSA2GSDS667C4 2GB

Corsair VSA2GSDS667C4 2GB

总分
star star star star star
Panram International Corporation D4N2666PS-16G 16GB

Panram International Corporation D4N2666PS-16G 16GB

差异 规格 评论

差异

Corsair VSA2GSDS667C4 2GB 需要考虑的原因
Corsair VSA2GSDS667C4 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 17.2
    测试中的平均数值
Panram International Corporation D4N2666PS-16G 16GB 需要考虑的原因
Panram International Corporation D4N2666PS-16G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 51
    左右 -96% 更低的延时
  • 更快的写入速度，GB/s
    15.4 left arrow 1,839.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
Corsair VSA2GSDS667C4 2GB
Panram International Corporation D4N2666PS-16G 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 26
  • 读取速度，GB/s
    4,246.9 left arrow 17.2
  • 写入速度，GB/s
    1,839.1 left arrow 15.4
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 4 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    721 left arrow 3617

Corsair VSA2GSDS667C4 2GB RAM的比较

SK Hynix HYMP112S64CP6-S6 1GB
Gloway International (HK) STK4U2400D17161C 16GB

Panram International Corporation D4N2666PS-16G 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-140.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Corsair VSA2GSDS667C4 2GB
Corsair VSA2GSDS667C4 2GB
Panram International Corporation D4N2666PS-16G 16GB
Panram International Corporation D4N2666PS-16G 16GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB
Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Samsung M471A2K43EB1-CWE 16GB
Samsung M471A2K43EB1-CWE 16GB
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
Crucial Technology CT4G4SFS824A.M8FE 4GB
Crucial Technology CT4G4SFS824A.M8FE 4GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Kingston 9965640-013.A01G 32GB
Kingston 9965640-013.A01G 32GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Micron Technology 36ASF2G72PZ-2G3A3 16GB
Micron Technology 36ASF2G72PZ-2G3A3 16GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
SK Hynix HMAA2GS6CJR8N-XN 16GB
SK Hynix HMAA2GS6CJR8N-XN 16GB
内存RAM
Corsair CMSO4GX3M1C1600C11 4GB
Corsair CMSO4GX3M1C1600C11 4GB
Nanya Technology NT8GA64D88CX3S-JR 8GB
Nanya Technology NT8GA64D88CX3S-JR 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Kingston KHX3200C20S4/16GX 16GB
Kingston KHX3200C20S4/16GX 16GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Hoodisk Electronics Co Ltd GKE160UD102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160UD102408-2666 16GB
内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
G Skill Intl F4-2133C15-16GFXR 16GB
G Skill Intl F4-2133C15-16GFXR 16GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Kingston KHX3466C16D4/8GX 8GB
Kingston KHX3466C16D4/8GX 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Kingmax Semiconductor GLLH22F-18---------- 16GB
Kingmax Semiconductor GLLH22F-18---------- 16GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Mushkin MRA4S300GJJM16G 16GB
Mushkin MRA4S300GJJM16G 16GB
内存RAM