Corsair VSA2GSDS667C4 2GB vs Samsung M471A4G43MB1-CTD 32GB

总分

Corsair VSA2GSDS667C4 2GB

Corsair VSA2GSDS667C4 2GB

总分

Samsung M471A4G43MB1-CTD 32GB

Samsung M471A4G43MB1-CTD 32GB

差异规格评论

差异

Corsair VSA2GSDS667C4 2GB

需要考虑的原因
Corsair VSA2GSDS667C4 2GB

报告一个错误

更快的读取速度，GB/s

4 15

测试中的平均数值

Samsung M471A4G43MB1-CTD 32GB

需要考虑的原因
Samsung M471A4G43MB1-CTD 32GB

报告一个错误

低于PassMark测试中的延时，ns

37 51

左右 -38% 更低的延时
更快的写入速度，GB/s

11.6 1,839.1

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Corsair VSA2GSDS667C4 2GB

Samsung M471A4G43MB1-CTD 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

51 37
读取速度，GB/s

4,246.9 15.0
写入速度，GB/s

1,839.1 11.6
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 4 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

721 2907

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hexon Technology Pte Ltd HEXON 1GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Samsung M391A1G43EB1-CPB 8GB