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Crucial Technology BLE4G3D1608DE1TX0. 4GB
G Skill Intl F4-4133C19-8GTZKWC 8GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB vs G Skill Intl F4-4133C19-8GTZKWC 8GB

总分
star star star star star
Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

总分
star star star star star
G Skill Intl F4-4133C19-8GTZKWC 8GB

G Skill Intl F4-4133C19-8GTZKWC 8GB

差异 规格 评论

差异

Crucial Technology BLE4G3D1608DE1TX0. 4GB 需要考虑的原因
Crucial Technology BLE4G3D1608DE1TX0. 4GB
报告一个错误
G Skill Intl F4-4133C19-8GTZKWC 8GB 需要考虑的原因
G Skill Intl F4-4133C19-8GTZKWC 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 34
    左右 -55% 更低的延时
  • 更快的读取速度，GB/s
    19 left arrow 16.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.0 left arrow 9.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Crucial Technology BLE4G3D1608DE1TX0. 4GB
G Skill Intl F4-4133C19-8GTZKWC 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    34 left arrow 22
  • 读取速度，GB/s
    16.2 left arrow 19.0
  • 写入速度，GB/s
    9.7 left arrow 17.0
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2636 left arrow 3929

Crucial Technology BLE4G3D1608DE1TX0. 4GB RAM的比较

Kingston HX316C10F/4 4GB
Corsair CM4X4GF2666Z16K4 4GB

G Skill Intl F4-4133C19-8GTZKWC 8GB RAM的比较

Samsung M378A1K43DB2-CTD 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5471-030.A00LF 8GB
Kingston 99U5471-030.A00LF 8GB
Crucial Technology CT8G4SFS824A.C8FE 8GB
Crucial Technology CT8G4SFS824A.C8FE 8GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Gloway International (HK) STK4U2400D17161C 16GB
Gloway International (HK) STK4U2400D17161C 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3866C18-16GTZR 16GB
G Skill Intl F4-3866C18-16GTZR 16GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Kingston 9965589-005.A01G 8GB
Kingston 9965589-005.A01G 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HMAA1GS6CJR6N-XN 8GB
SK Hynix HMAA1GS6CJR6N-XN 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-3000C16-8GVRB 8GB
G Skill Intl F4-3000C16-8GVRB 8GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO10240
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Essencore Limited KD48GU880-32A160T 8GB
Essencore Limited KD48GU880-32A160T 8GB
内存RAM
A-DATA Technology AD4U240038G17-BHYA 8GB
A-DATA Technology AD4U240038G17-BHYA 8GB
Crucial Technology BL16G26C16U4B.16FE 16GB
Crucial Technology BL16G26C16U4B.16FE 16GB
内存RAM
Kingston 99U5471-012.A00LF 4GB
Kingston 99U5471-012.A00LF 4GB
Transcend Information TS512MLH64V4H 4GB
Transcend Information TS512MLH64V4H 4GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Micron Technology 16ATF2G64AZ-3G2E1 16GB
Micron Technology 16ATF2G64AZ-3G2E1 16GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology CT8G4DFS832A.C8FE 8GB
Crucial Technology CT8G4DFS832A.C8FE 8GB
内存RAM
Kingston 99U5471-037.A00LF 8GB
Kingston 99U5471-037.A00LF 8GB
A-DATA Technology AD5U48008G-B 8GB
A-DATA Technology AD5U48008G-B 8GB
内存RAM