RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Samsung M471A5644EB0-CPB 2GB
比较
Crucial Technology BLE4G3D1608DE1TX0. 4GB vs Samsung M471A5644EB0-CPB 2GB
总分
Crucial Technology BLE4G3D1608DE1TX0. 4GB
总分
Samsung M471A5644EB0-CPB 2GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLE4G3D1608DE1TX0. 4GB
报告一个错误
更快的读取速度,GB/s
16.2
13.2
测试中的平均数值
更快的写入速度,GB/s
9.7
9.1
测试中的平均数值
需要考虑的原因
Samsung M471A5644EB0-CPB 2GB
报告一个错误
低于PassMark测试中的延时,ns
28
34
左右 -21% 更低的延时
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Samsung M471A5644EB0-CPB 2GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
34
28
读取速度,GB/s
16.2
13.2
写入速度,GB/s
9.7
9.1
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2636
1989
Crucial Technology BLE4G3D1608DE1TX0. 4GB RAM的比较
Kingston HX316C10F/4 4GB
Corsair CM4X4GF2666Z16K4 4GB
Samsung M471A5644EB0-CPB 2GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 99U5584-004.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
Samsung M378B5673FH0-CH9 2GB
Kingston 9905625-096.A00G 16GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Samsung M471A5644EB0-CPB 2GB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-3200C16-16GVS 16GB
Essencore Limited KD48GU88C-26N1600 8GB
Corsair CMD16GX4M2A2400C14 8GB
Kingston 9965433-406.A00LF 8GB
Kingston 9905665-014.A00G 4GB
Kingston KHX1866C10D3/8GX 8GB
Apacer Technology 78.B1GN3.AZ32B 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Transcend Information TS512MSH64V4H 4GB
Samsung M393B1G70BH0-CK0 8GB
Micron Technology 36ASF4G72PZ-2G3B1 32GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Apacer Technology 78.CAGPW.40C0B 8GB
Kingston 9905471-001.A01LF 2GB
G Skill Intl F4-3000C16-16GTRG 16GB
Samsung 1600 CL10 Series 8GB
Essencore Limited KD48GU88A-26N1600 8GB
SK Hynix HMT351R7EFR8C-RD 4GB
Avant Technology J644GU44J2320NF 32GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BLM8G40C18U4B.M8FE1 8GB
报告一个错误
×
Bug description
Source link