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Crucial Technology BLS16G4S240FSD.16FAD 16GB
Corsair CMSX32GX4M2A2400C16 16GB

Crucial Technology BLS16G4S240FSD.16FAD 16GB vs Corsair CMSX32GX4M2A2400C16 16GB

总分
star star star star star
Crucial Technology BLS16G4S240FSD.16FAD 16GB

Crucial Technology BLS16G4S240FSD.16FAD 16GB

总分
star star star star star
Corsair CMSX32GX4M2A2400C16 16GB

Corsair CMSX32GX4M2A2400C16 16GB

差异 规格 评论

差异

Crucial Technology BLS16G4S240FSD.16FAD 16GB 需要考虑的原因
Crucial Technology BLS16G4S240FSD.16FAD 16GB
报告一个错误
Corsair CMSX32GX4M2A2400C16 16GB 需要考虑的原因
Corsair CMSX32GX4M2A2400C16 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 48
    左右 -33% 更低的延时
  • 更快的读取速度，GB/s
    15.1 left arrow 10.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.4 left arrow 8.5
    测试中的平均数值

规格

完整的技术规格清单
Crucial Technology BLS16G4S240FSD.16FAD 16GB
Corsair CMSX32GX4M2A2400C16 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    48 left arrow 36
  • 读取速度，GB/s
    10.4 left arrow 15.1
  • 写入速度，GB/s
    8.5 left arrow 12.4
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 18
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1858 left arrow 2871

Crucial Technology BLS16G4S240FSD.16FAD 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
TwinMOS 8DPT5MK8-TATP 2GB

Corsair CMSX32GX4M2A2400C16 16GB RAM的比较

SK Hynix HYMP112U64CP8-S5 1GB
Samsung M378A1K43DB2-CTD 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
A-DATA Technology DDR4 2666 2OZ 4GB
A-DATA Technology DDR4 2666 2OZ 4GB
内存RAM
Crucial Technology BLS16G4S240FSD.16FAD 16GB
Crucial Technology BLS16G4S240FSD.16FAD 16GB
Corsair CMSX32GX4M2A2400C16 16GB
Corsair CMSX32GX4M2A2400C16 16GB
内存RAM
SK Hynix HMT31GR7CFR4C-PB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Gloway International (HK) STK2133C15-8GB 8GB
Gloway International (HK) STK2133C15-8GB 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
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Crucial Technology BLS16G4D32AESB.M16FE 16GB
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A-DATA Technology VDQVE1B16 2GB
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内存RAM
Samsung M471A1G44AB0-CWE 8GB
Samsung M471A1G44AB0-CWE 8GB
Crucial Technology CT32G4SFD832A.C16FE 32GB
Crucial Technology CT32G4SFD832A.C16FE 32GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
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Team Group Inc. TEAMGROUP-UD4-2666 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
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Crucial Technology CT8G4SFS824A.M8FH 8GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
内存RAM
Kingston 9965525-010.A00LF 4GB
Kingston 9965525-010.A00LF 4GB
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内存RAM
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Kingston 9905403-444.A00LF 4GB
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Corsair CMK32GX4M4B3200C14 8GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Kingston 9905663-007.A00G 16GB
Kingston 9905663-007.A00G 16GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
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Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N
内存RAM