RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMSO16GX4M1A2133C15 16GB
比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Corsair CMSO16GX4M1A2133C15 16GB
总分
Crucial Technology BLS4G4D240FSE.8FBD 4GB
总分
Corsair CMSO16GX4M1A2133C15 16GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
低于PassMark测试中的延时,ns
29
35
左右 17% 更低的延时
更快的读取速度,GB/s
16.9
13.7
测试中的平均数值
更快的写入速度,GB/s
12.0
9.6
测试中的平均数值
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
Corsair CMSO16GX4M1A2133C15 16GB
报告一个错误
规格
完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMSO16GX4M1A2133C15 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
29
35
读取速度,GB/s
16.9
13.7
写入速度,GB/s
12.0
9.6
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2601
2636
Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较
SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
Corsair CMSO16GX4M1A2133C15 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
A-DATA Technology AD73I1C1674EV 4GB
G Skill Intl F4-2400C15Z8GNT 8GB
Samsung 1600 CL10 Series 8GB
Gold Key Technology Co Ltd NMUD480E82-3200E 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMSO16GX4M1A2133C15 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
V-Color Technology Inc. TD8G16C16-UHK 8GB
Samsung M395T5160QZ4-CE66 2GB
Samsung M395T5160QZ4-CE65 2GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston KHX2133C13S4/8G 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-4266C19-8GTZR 8GB
SK Hynix HMT451S6BFR8A-PB 4GB
Patriot Memory (PDP Systems) PSD416G32002 16GB
Samsung M3 93T5750CZA-CE6 2GB
Kingmax Semiconductor GZOH23F-18---------- 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Kingston KY7N41-MIE 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Corsair CMK16GX4M2G4000C16 8GB
Samsung M471B5673FH0-CF8 2GB
A-DATA Technology DDR4 3333 2OZ 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Chun Well Technology Holding Limited ND4U0840180BRPDE 8
Crucial Technology CT16G4DFD8266.M16FJ 16GB
Kingston 9905700-017.A00G 8GB
报告一个错误
×
Bug description
Source link