Samsung M393B5170FH0-CK0 4GB vs G Skill Intl F4-3000C16-16GISB 16GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

G Skill Intl F4-3000C16-16GISB 16GB

G Skill Intl F4-3000C16-16GISB 16GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 29

左右 7% 更低的延时

G Skill Intl F4-3000C16-16GISB 16GB

需要考虑的原因
G Skill Intl F4-3000C16-16GISB 16GB

报告一个错误

更快的读取速度，GB/s

17.2 11.8

测试中的平均数值
更快的写入速度，GB/s

13.0 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

G Skill Intl F4-3000C16-16GISB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 29
读取速度，GB/s

11.8 17.2
写入速度，GB/s

7.3 13.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2057 3416

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

G Skill Intl F4-3000C16-16GISB 16GB

G Skill Intl F4-3000C16-16GISB 16GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

V-Color Technology Inc. TL48G36S8KBNRGB18 8GB

V-Color Technology Inc. TL48G36S8KBNRGB18 8GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905630-007.A00G 8GB

Kingston 9905630-007.A00G 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Corsair CMW16GX4M2Z4600C18 8GB

Corsair CMW16GX4M2Z4600C18 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Kingston XK2M26-MIE-NX 16GB

Kingston XK2M26-MIE-NX 16GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

G Skill Intl F4-4266C19-8GTRS 8GB

G Skill Intl F4-4266C19-8GTRS 8GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

G Skill Intl F4-3200C16-8GVK 8GB

G Skill Intl F4-3200C16-8GVK 8GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Micron Technology 16ATF4G64HZ-3G2E1 32GB

Micron Technology 16ATF4G64HZ-3G2E1 32GB

Kingston ASU16D3LS1KFG/4G 4GB

Kingston ASU16D3LS1KFG/4G 4GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Crucial Technology CT8G4SFRA266.C8FD1 8GB

Crucial Technology CT8G4SFRA266.C8FD1 8GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Kingston HX316C10F/8 8GB

Kingston HX316C10F/8 8GB

Kingston HP26D4U6S8ME-8X 8GB

Kingston HP26D4U6S8ME-8X 8GB