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Samsung 1600 CL10 Series 8GB
Kingston KHX2133C14/16G 16GB
比较
Samsung 1600 CL10 Series 8GB vs Kingston KHX2133C14/16G 16GB
总分
Samsung 1600 CL10 Series 8GB
总分
Kingston KHX2133C14/16G 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
低于PassMark测试中的延时,ns
25
33
左右 24% 更低的延时
更快的读取速度,GB/s
16.1
15.7
测试中的平均数值
需要考虑的原因
Kingston KHX2133C14/16G 16GB
报告一个错误
更快的写入速度,GB/s
10.2
10.1
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Samsung 1600 CL10 Series 8GB
Kingston KHX2133C14/16G 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
33
读取速度,GB/s
16.1
15.7
写入速度,GB/s
10.1
10.2
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2764
2871
Samsung 1600 CL10 Series 8GB RAM的比较
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
Kingston KHX2133C14/16G 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9905403-444.A00LF 4GB
Corsair CMW64GX4M4C3466C16 16GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-3200C14-16GTZN 16GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-4133C17-8GTZR 8GB
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2953EZ3-CE7 1GB
Apacer Technology 78.01G86.9H50C 1GB
Kllisre M471A1K43CB1-CTD 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BL16G36C16U4W.M16FE1 16GB
Kingston 9905403-156.A00LF 2GB
Golden Empire CL16-18-18 D4-3400 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
G Skill Intl F4-3000C15-4GTZB 4GB
Samsung M4 70T5663CZ3-CE6 2GB
Corsair CMSX16GX4M1A2400C16 16GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Crucial Technology CT16G4SFD8266.C8FBD1 16GB
Crucial Technology CT51264BD1339.M16F 4GB
Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB
Samsung M471A5143SB1-CRC 4GB
Micron Technology 8ATF1G64HZ-2G6D1 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4SFS832A.C8FP 8GB
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-3600C19-8GVSB 8GB
报告一个错误
×
Bug description
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