RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMT32GX4M2Z3600C18 16GB
比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Corsair CMT32GX4M2Z3600C18 16GB
总分
Crucial Technology BLS4G4D240FSE.8FBD 4GB
总分
Corsair CMT32GX4M2Z3600C18 16GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
需要考虑的原因
Corsair CMT32GX4M2Z3600C18 16GB
报告一个错误
更快的读取速度,GB/s
18
16.9
测试中的平均数值
更快的写入速度,GB/s
16.0
12.0
测试中的平均数值
更高的内存带宽,mbps
21300
19200
左右 1.11 更高的带宽
规格
完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMT32GX4M2Z3600C18 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
29
29
读取速度,GB/s
16.9
18.0
写入速度,GB/s
12.0
16.0
内存带宽,mbps
19200
21300
Other
描述
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2601
3686
Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较
SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
Corsair CMT32GX4M2Z3600C18 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
TwinMOS 8DHE3MN8-HATP 2GB
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMT32GX4M2Z3600C18 16GB
Kingston KVR800D2N6/2G 2GB
Corsair CMD16GX4M4A2666C15 4GB
Samsung M471B5173DB0-YK0 4GB
Crucial Technology BLS16G4D240FSE.16FAD 16GB
Samsung M471B5173DB0-YK0 4GB
Micron Technology 8ATF1G64HZ-2G6E3 8GB
Kingston 99U5474-037.A00LF 4GB
Crucial Technology BLT4G4D30AETA.K8FD 4GB
Samsung M3 78T5663RZ3-CF7 2GB
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB
Avant Technology F641GU67F9333G 8GB
Panram International Corporation W4N2666PS-16G 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
INTENSO 4GB
Kingston 9905316-106.A02LF 1GB
SK Hynix HMA82GU6AFR8N-TF 16GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology CT16G4DFD824A.C16FJ 16GB
Kingston ACR16D3LS1NGG/2G 2GB
SK Hynix HMA82GU7AFR8N-UH 16GB
AMD R5316G1609U2K 8GB
Kingston 9905678-029.A00G 8GB
Samsung M471B5173QH0-YK0 4GB
Essencore Limited KD4AGU880-36A180C 16GB
报告一个错误
×
Bug description
Source link