Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Corsair CMW16GX4M2K3600C16 8GB

总分

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分

Corsair CMW16GX4M2K3600C16 8GB

Corsair CMW16GX4M2K3600C16 8GB

差异规格评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 31

左右 6% 更低的延时
更快的读取速度，GB/s

16.9 16.3

测试中的平均数值
更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

Corsair CMW16GX4M2K3600C16 8GB

需要考虑的原因
Corsair CMW16GX4M2K3600C16 8GB

报告一个错误

更快的写入速度，GB/s

15.5 12.0

测试中的平均数值

规格

完整的技术规格清单

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Corsair CMW16GX4M2K3600C16 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 31
读取速度，GB/s

16.9 16.3
写入速度，GB/s

12.0 15.5
内存带宽，mbps

19200 17000

Other

描述

PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2601 3205

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Corsair CMW16GX4M2K3600C16 8GB

Corsair CMW16GX4M2K3600C16 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Maxsun MSD44G24Q0 4GB

Maxsun MSD44G24Q0 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston KHX2133C14D4/4G 4GB

Kingston KHX2133C14D4/4G 4GB

Kingston 99U5458-005.A01LF 4GB

Kingston 99U5458-005.A01LF 4GB

G Skill Intl F4-3733C17-16GTZR 16GB

G Skill Intl F4-3733C17-16GTZR 16GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

Kingston 99U5471-002.A00LF 2GB

Kingston 99U5471-002.A00LF 2GB

Samsung M378T5663DZ3-CF7 2GB

Samsung M378T5663DZ3-CF7 2GB

Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB

Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMV8GX4M1A2400C16 8GB

Corsair CMV8GX4M1A2400C16 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Patriot Memory (PDP Systems) 2133 C14 Series 8GB

Patriot Memory (PDP Systems) 2133 C14 Series 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M471A2K43CB1-CTD 16GB

Samsung M471A2K43CB1-CTD 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

SK Hynix HMA851S6CJR6N-VK 4GB

SK Hynix HMA851S6CJR6N-VK 4GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Crucial Technology BLE4G4D32AEEA.K8FD 4GB

Crucial Technology BLE4G4D32AEEA.K8FD 4GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Micron Technology 16ATF2G64HZ-2G3B1 16GB

Micron Technology 16ATF2G64HZ-2G3B1 16GB