RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BL8G32C16U4B.M8FE 8GB
比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Crucial Technology BL8G32C16U4B.M8FE 8GB
总分
Crucial Technology BLS4G4D240FSE.8FBD 4GB
总分
Crucial Technology BL8G32C16U4B.M8FE 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
需要考虑的原因
Crucial Technology BL8G32C16U4B.M8FE 8GB
报告一个错误
低于PassMark测试中的延时,ns
28
29
左右 -4% 更低的延时
更快的读取速度,GB/s
17.9
16.9
测试中的平均数值
更快的写入速度,GB/s
14.9
12.0
测试中的平均数值
更高的内存带宽,mbps
21300
19200
左右 1.11 更高的带宽
规格
完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BL8G32C16U4B.M8FE 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
29
28
读取速度,GB/s
16.9
17.9
写入速度,GB/s
12.0
14.9
内存带宽,mbps
19200
21300
Other
描述
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2601
3460
Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较
SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
Crucial Technology BL8G32C16U4B.M8FE 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Apacer Technology 78.01G86.9H50C 1GB
Crucial Technology BLS16G4D240FSC.16FBR 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLS8G4D26BFSCK.8FD 8GB
Samsung M471B5173EB0-YK0 4GB
Micron Technology 8ATF1G64AZ-2G6B1 8GB
Kingston 9905403-090.A01LF 4GB
Apacer Technology D22.2221ZA.001 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 99U5643-001.A00G 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BL8G36C16U4BL.M8FE1 8GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Samsung M393A2K40BB0-CPB 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 18ASF1G72PZ-2G1A2 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BL8G32C16U4B.M8FE 8GB
Samsung M386B4G70DM0-CMA4 32GB
SK Hynix HMA41GR7MFR4N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT4G4SFS824A.M8FB 4GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Corsair CMK16GX4M1A2666C16 16GB
Corsair CMY8GX3M2A2666C10 4GB
Samsung M378A2K43CB1-CRC 16GB
Kingston KHX1600C9D3/8G 8GB
G Skill Intl F4-3600C17-16GTZR 16GB
报告一个错误
×
Bug description
Source link