Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Crucial Technology BL8G36C16U4W.M8FE1 8GB

总分

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分

Crucial Technology BL8G36C16U4W.M8FE1 8GB

Crucial Technology BL8G36C16U4W.M8FE1 8GB

差异规格评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 30

左右 3% 更低的延时

Crucial Technology BL8G36C16U4W.M8FE1 8GB

需要考虑的原因
Crucial Technology BL8G36C16U4W.M8FE1 8GB

报告一个错误

更快的读取速度，GB/s

19.6 16.9

测试中的平均数值
更快的写入速度，GB/s

15.5 12.0

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BL8G36C16U4W.M8FE1 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 30
读取速度，GB/s

16.9 19.6
写入速度，GB/s

12.0 15.5
内存带宽，mbps

19200 21300

Other

描述

PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2601 3432

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Golden Empire CL16-18-18 D4-3400 4GB

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Corsair CMD32GX4M2C3200C14M 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMK128GX4M8A2666C16 16GB

Corsair CMK128GX4M8A2666C16 16GB

Samsung M393B1K70CH0-YH9 8GB

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G Skill Intl F4-3733C17-8GTZSW 8GB

G Skill Intl F4-3733C17-8GTZSW 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Team Group Inc. TEAMGROUP-UD4-3866 8GB

Team Group Inc. TEAMGROUP-UD4-3866 8GB

Corsair VS1GB800D2 1GB

Corsair VS1GB800D2 1GB

G Skill Intl F4-3200C15-16GVR 16GB

G Skill Intl F4-3200C15-16GVR 16GB