RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D26BFSE.8FBR2 4GB
比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Crucial Technology BLS4G4D26BFSE.8FBR2 4GB
总分
Crucial Technology BLS4G4D240FSE.8FBD 4GB
总分
Crucial Technology BLS4G4D26BFSE.8FBR2 4GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
低于PassMark测试中的延时,ns
29
66
左右 56% 更低的延时
更快的读取速度,GB/s
16.9
16.4
测试中的平均数值
更快的写入速度,GB/s
12.0
9.4
测试中的平均数值
需要考虑的原因
Crucial Technology BLS4G4D26BFSE.8FBR2 4GB
报告一个错误
更高的内存带宽,mbps
21300
19200
左右 1.11 更高的带宽
规格
完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D26BFSE.8FBR2 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
29
66
读取速度,GB/s
16.9
16.4
写入速度,GB/s
12.0
9.4
内存带宽,mbps
19200
21300
Other
描述
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2601
2038
Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较
SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
Crucial Technology BLS4G4D26BFSE.8FBR2 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DQKD1A08 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D26BFSE.8FBR2 4GB
Samsung M395T2863QZ4-CF76 1GB
Kingston 9905624-008.A00G 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DDR4 3000 8GB
Kingston KVR16N11/8-SP 8GB
Samsung M393B1K70CH0-YH9 8GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C
Kingston ACR26D4S9S8ME-8 8GB
Kingston 9905403-090.A01LF 4GB
G Skill Intl F4-2400C17-16GIS 16GB
Samsung M393B5170FH0-CK0 4GB
Corsair CMK32GX4M4B3866C18 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMSO32GX4M2A2133C15 16GB
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-3000C16-8GTRG 8GB
A-DATA Technology DDR3 1333G 2GB
ISD Technology Limited IM48GU48N21-FFFHM 8GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Crucial Technology CT4G4DFS824A.M8FF 4GB
Micron Technology 18HTF12872AY-800F1 1GB
Kingston 9905702-008.A00G 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology BLS16G4D240FSE.16FBD 16GB
Ramos Technology EWB8GB681CA3-16IC 8GB
G Skill Intl F4-3600C18-32GTZN 32GB
报告一个错误
×
Bug description
Source link