Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Crucial Technology CT16G4DFRA266.M16FR 16GB

总分

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分

Crucial Technology CT16G4DFRA266.M16FR 16GB

Crucial Technology CT16G4DFRA266.M16FR 16GB

差异规格评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 33

左右 12% 更低的延时
更快的读取速度，GB/s

16.9 15.7

测试中的平均数值

Crucial Technology CT16G4DFRA266.M16FR 16GB

需要考虑的原因
Crucial Technology CT16G4DFRA266.M16FR 16GB

报告一个错误

更快的写入速度，GB/s

12.8 12.0

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology CT16G4DFRA266.M16FR 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 33
读取速度，GB/s

16.9 15.7
写入速度，GB/s

12.0 12.8
内存带宽，mbps

19200 21300

Other

描述

PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2601 3062

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Samsung M471A1K43CB1-CTD 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 4ATF1G64HZ-3G2E2 8GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB