Nanya Technology M2X4G64CB8HG5N-DG 4GB

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

Nanya Technology M2X4G64CB8HG5N-DG 4GB vs Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

总分

Nanya Technology M2X4G64CB8HG5N-DG 4GB

Nanya Technology M2X4G64CB8HG5N-DG 4GB

总分

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

差异规格评论

差异

Nanya Technology M2X4G64CB8HG5N-DG 4GB

需要考虑的原因
Nanya Technology M2X4G64CB8HG5N-DG 4GB

报告一个错误

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

需要考虑的原因
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 39

左右 -39% 更低的延时
更快的读取速度，GB/s

18.1 13.7

测试中的平均数值
更快的写入速度，GB/s

14.8 9.7

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2X4G64CB8HG5N-DG 4GB

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 28
读取速度，GB/s

13.7 18.1
写入速度，GB/s

9.7 14.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2431 3564

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

Kingston KVR24N17S8/4 4GB

Kingston KVR24N17S8/4 4GB

Apacer Technology 78.B1GET.AU00C 4GB

Apacer Technology 78.B1GET.AU00C 4GB

Apacer Technology 76.D105G.D090B 16GB

Apacer Technology 76.D105G.D090B 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Smart Modular SF4641G8CK8IEGKSBG 8GB

Smart Modular SF4641G8CK8IEGKSBG 8GB

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

G Skill Intl F4-3600C16-8GTZ 8GB

G Skill Intl F4-3600C16-8GTZ 8GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

G Skill Intl F4-4000C18-32GTRS 32GB

G Skill Intl F4-4000C18-32GTRS 32GB

Elpida EBJ41UF8BDW0-GN-F 4GB

Elpida EBJ41UF8BDW0-GN-F 4GB

Team Group Inc. Team-Elite-2400 4GB

Team Group Inc. Team-Elite-2400 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

Micron Technology 16ATF2G64AZ-2G6E1 16GB

Micron Technology 16ATF2G64AZ-2G6E1 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

G Skill Intl F4-2933C14-8GTZRX 8GB

G Skill Intl F4-2933C14-8GTZRX 8GB

SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

V-GEN D4H8GL32A8TS 8GB

V-GEN D4H8GL32A8TS 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-2933C14-8GTZRX 8GB

G Skill Intl F4-2933C14-8GTZRX 8GB

Crucial Technology CT16G4SFRA32A.C8FE 16GB

Crucial Technology CT16G4SFRA32A.C8FE 16GB

Crucial Technology CT16G4SFRA32A.C16FP 16GB

Crucial Technology CT16G4SFRA32A.C16FP 16GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Crucial Technology BL8G32C16U4WL.M8FE1 8GB

Crucial Technology BL8G32C16U4WL.M8FE1 8GB

Nanya Technology M2F4G64CB8HB9N-CG 4GB

Nanya Technology M2F4G64CB8HB9N-CG 4GB

Smart Modular SF4641G8CKHI6DFSEG 8GB

Smart Modular SF4641G8CKHI6DFSEG 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Crucial Technology CT8G4DFS8266.M8FD 8GB

Crucial Technology CT8G4DFS8266.M8FD 8GB