Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Crucial Technology CT4G4DFS8266.C8FE 4GB

总分

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分

Crucial Technology CT4G4DFS8266.C8FE 4GB

Crucial Technology CT4G4DFS8266.C8FE 4GB

差异规格评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 47

左右 38% 更低的延时
更快的读取速度，GB/s

16.9 14

测试中的平均数值
更快的写入速度，GB/s

12.0 8.4

测试中的平均数值

Crucial Technology CT4G4DFS8266.C8FE 4GB

需要考虑的原因
Crucial Technology CT4G4DFS8266.C8FE 4GB

报告一个错误

更高的内存带宽，mbps

21300 19200

左右 1.11 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology CT4G4DFS8266.C8FE 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 47
读取速度，GB/s

16.9 14.0
写入速度，GB/s

12.0 8.4
内存带宽，mbps

19200 21300

Other

描述

PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2601 2640

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMW32GX4M4D3600C18 8GB

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Samsung M4 70T2953EZ3-CE6 1GB

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Micron Technology CT8G4DFD8213.16FA11 8GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingston KMKYF9-MIH 8GB

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Samsung M391B5673EH1-CH9 2GB

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A-DATA Technology AO1P32NC8T1-BCSS 8GB

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

Corsair CMD16GX4M4B3333C16 4GB

Corsair CMD16GX4M4B3333C16 4GB