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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT4G4SFS8266.M8FE 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Crucial Technology CT4G4SFS8266.M8FE 4GB

总分
star star star star star
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分
star star star star star
Crucial Technology CT4G4SFS8266.M8FE 4GB

Crucial Technology CT4G4SFS8266.M8FE 4GB

差异 规格 评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB 需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 94
    左右 69% 更低的延时
  • 更快的读取速度，GB/s
    16.9 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 6.4
    测试中的平均数值
Crucial Technology CT4G4SFS8266.M8FE 4GB 需要考虑的原因
Crucial Technology CT4G4SFS8266.M8FE 4GB
报告一个错误
  • 更高的内存带宽，mbps
    21300 left arrow 19200
    左右 1.11 更高的带宽

规格

完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT4G4SFS8266.M8FE 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 94
  • 读取速度，GB/s
    16.9 left arrow 13.2
  • 写入速度，GB/s
    12.0 left arrow 6.4
  • 内存带宽，mbps
    19200 left arrow 21300
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2601 left arrow 1390

Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较

SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB

Crucial Technology CT4G4SFS8266.M8FE 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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G Skill Intl F2-8500CL5-2GBPI 2GB
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Samsung 1600 CL10 Series 8GB
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Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Crucial Technology CT4G4SFS8266.M8FE 4GB
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内存RAM
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内存RAM
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