Crucial Technology BLS4G4D240FSE.8FBD 4GB vs G Skill Intl F4-2666C15-16GVK 16GB

总分

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分

G Skill Intl F4-2666C15-16GVK 16GB

G Skill Intl F4-2666C15-16GVK 16GB

差异规格评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 39

左右 26% 更低的延时
更快的读取速度，GB/s

16.9 13.8

测试中的平均数值
更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

G Skill Intl F4-2666C15-16GVK 16GB

需要考虑的原因
G Skill Intl F4-2666C15-16GVK 16GB

报告一个错误

更快的写入速度，GB/s

13.6 12.0

测试中的平均数值

规格

完整的技术规格清单

Crucial Technology BLS4G4D240FSE.8FBD 4GB

G Skill Intl F4-2666C15-16GVK 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 39
读取速度，GB/s

16.9 13.8
写入速度，GB/s

12.0 13.6
内存带宽，mbps

19200 17000

Other

描述

PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2601 2971

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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Samsung M378A1K43EB2-CVF 8GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

Crucial Technology CT32G48C40U5.M16A1 32GB

Crucial Technology CT32G48C40U5.M16A1 32GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB

Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB

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Kingston KHX1866C9D3/8GX 8GB

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InnoDisk Corporation M4S0-8GS1NCIK 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

G Skill Intl F4-2400C15-4GRR 4GB

G Skill Intl F4-2400C15-4GRR 4GB